unisonic technologies co., ltd 3n60 power mosfet www.unisonic.com.tw 1 of 9 copyright ? 2014 unisonic technologies co., ltd qw-r502-110.h 3 a , 600v n-channel power mosfet ? description the utc 3n60 is a high voltage and high current power mosfet , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characte ristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * v ds = 600v, i d = 3a * r ds(on) < 3.6 ? @v gs = 10 v * ultra low gate charge ( typical 18 nc ) * low reverse transfer capacitance ( c rss = typical 5.5 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol
3n60 power mosfet unisonic technologies co., ltd 2 of 9 www.unisonic.com.tw qw-r502-110.h ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 3n60l-ta3-t 3N60G-TA3-T to-220 g d s tube 3n60l-tf1-t 3n60g-tf1-t to-220f1 g d s tube 3n60l-tf3-t 3n60g-tf3-t to-220f g d s tube 3n60l-tf3t-t 3n60g-tf3t-t to-220f3 g d s tube 3n60l-tm3-t 3n60g-tm3-t to-251 g d s tube 3n60l-tn3-r 3n60g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source ? marking information package marking to-220 to-220f to-220f1 to-220f3 to-251 to-252
3n60 power mosfet unisonic technologies co., ltd 3 of 9 www.unisonic.com.tw qw-r502-110.h ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 3.0 a continuous drain current i d 3.0 a pulsed drain current (note 2) i dm 12 a avalanche energy single pulsed (note 3) e as 200 mj repetitive (note 2) e ar 7.5 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220 p d 75 w to-220f/to-220f1 to-220f3 34 to-251/to-252 50 junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j . 3. l=44.4mh, i as =3a, v dd =50v, r g =25 ? , starting t j = 25c 4. i sd 3.0a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient to-220 ja 62.5 c/w to-220f/to-220f1 to-220f3 62.5 to-251/to-252 110 junction to case to-220 jc 1.67 c/w to-220f/to-220f1 to-220f3 3.68 to-251/to-252 2.5
3n60 power mosfet unisonic technologies co., ltd 4 of 9 www.unisonic.com.tw qw-r502-110.h ? electrical characteristics (t c =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 600 v drain-source leakage current i dss v ds =600 v, v gs =0 v 10 a gate-source leakage current forward i gss v gs =30 v, v ds =0 v 100 na reverse v gs =-30 v, v ds =0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.6 v/ on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10 v, i d =1.5a 2.8 3.6 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1mhz 350 450 pf output capacitance c oss 50 65 pf reverse transfer capacitance c rss 5.5 7.5 pf switching characteristics turn-on delay time t d ( on ) v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 35 50 ns turn-on rise time t r 60 70 ns turn-off delay time t d ( off ) 100 150 ns turn-off fall time t f 65 75 ns total gate charge q g v ds =50v, i d =1.3a, i g =100 a v gs =10v (note 1, 2) 18.5 23 nc gate-source charge q gs 5.2 nc gate-drain charge q gd 4.9 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0 v, i s =3.0a 1.4 v maximum continuous drain-source diode forward current i s 3.0 a maximum pulsed drain-source diode forward current i sm 12 a reverse recovery time t rr v gs =0v, i s =3.0a, di f /dt = 100 a/ s (note 1) 210 ns reverse recovery charge q rr 1.2 c notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. essentially independent of operating temperature.
unisonic technologies co., ltd 3n60 power mosfet unisonic technologies co., ltd 5 of 9 www.unisonic.com.tw qw-r502-110.h ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period
3n60 power mosfet unisonic technologies co., ltd 6 of 9 www.unisonic.com.tw qw-r502-110.h peak diode recovery dv/dt waveforms ? test circuits and waveforms (cont.) switching test circuit switching waveforms 50k 0.3 f dut v ds same type as d.u.t. 10v 0.2 f 12v charge q gs q gd q g v gs 3ma v gs gate charge test circuit gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
3n60 power mosfet unisonic technologies co., ltd 7 of 9 www.unisonic.com.tw qw-r502-110.h ? typical characteristics 0 0 drain-source on-resistance, r ds(on) ( ? ) drain current, i d (a) 24 1 2 4 5 6 on-resistance variation vs. drain current and gate voltage 3 6 8 10 12 1 0.1 0.2 source-drain voltage, v sd (v) reverse drain current, i dr (a) on state current vs. allowable case temperature 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 note: t j =25 notes: 1. v gs =0v 2. 250s test v gs =20v v gs =10v
3n60 power mosfet unisonic technologies co., ltd 8 of 9 www.unisonic.com.tw qw-r502-110.h ? typical characteristics(cont.) drain-source breakdown voltage, bv dss (normalized) drain-source on-resistance, r ds(on) (normalized) square wave pulse duration, t 1 (sec) transient thermal response curve case temperature, t c (c) 75 100 0 125 50 25 1.0 1.5 2.0 2.5 3.0 maximum drain current vs. case temperature 0.5 150 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 notes: 1. jc (t) = 1.18 /w max. 2. duty factor, d=t1/t2 3. t jm -t c =p dm jc (t) d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 10 0 10 -1 10 -2 drain-source voltage, v ds (v) 10 2 10 1 10 0 10 3 safe operating area ? 600v notes: 1. t j =25 2. t j =150 3. single pulse dc 10ms 1ms 100s operation in this area is limited by r ds(on) 10 1 600
3n60 power mosfet unisonic technologies co., ltd 9 of 9 www.unisonic.com.tw qw-r502-110.h utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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